35 W CW over 1.8-512 MHz, 65 V Wideband RF Power LDMOS Transistor

MRFX035H

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The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 512 MHz.

Features

  • Unmatched input and output allowing wide frequency range utilization
  • 50 ohm native output impedance
  • Qualified up to a maximum of 65 VDD operation
  • Characterized from 30 to 65 V for extended power range
  • High breakdown voltage for enhanced reliability
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

部品番号： MRFX035H, MRFX035H-2MHZ, MRFX035H-30MHZ.

RF Performance Tables

Typical Performance

VDD = 65 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
1.8-54 (1,2)CW32 CW24.158.1
30-512 (2)CW26 CW15.142.3
230 (3)CW35 CW24.875.8

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(dBm)		 Test
Voltage		 Result
230 (3)CW> 65:1
at all Phase Angles		23.5
(3 dB Overdrive)		65No Device Degradation
1. Measured in 1.8-54 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.

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