716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T07D160W04S
NRND
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The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz.

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Features

  • Designed for Wide Instantaneous Bandwidth Applications
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

RF Performance Tables

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.2 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
758 MHz22.247.77.3–29.3
780 MHz22.147.97.3–30.1
803 MHz21.548.57.2–31.4

880 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.3 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
865 MHz20.548.47.4–31.5
880 MHz20.548.67.4–31.6
895 MHz20.349.27.3–31.6

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N true 0 PSPA2T07D160W04Sja 3 エンジニアリング・ブリテン Technical Notes t521 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 0 English The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz. 1407964930618707520669 PSP 869.2 KB None None documents None 1407964930618707520669 /docs/en/data-sheet/A2T07D160W04S.pdf 869206 /docs/en/data-sheet/A2T07D160W04S.pdf A2T07D160W04S documents N N 2016-10-31 A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/A2T07D160W04S.pdf /docs/en/data-sheet/A2T07D160W04S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 13, 2014 980000996212993340 Data Sheet Y N A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet エンジニアリング・ブリテン Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 1 3 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L false 0 A2T07D160W04S downloads ja true 1 Y PSP Y Y エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 データ・シート 1 /docs/en/data-sheet/A2T07D160W04S.pdf 2016-10-31 1407964930618707520669 PSP 1 Aug 13, 2014 Data Sheet The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz. None /docs/en/data-sheet/A2T07D160W04S.pdf English documents 869206 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T07D160W04S.pdf A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/A2T07D160W04S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet 869.2 KB A2T07D160W04S N 1407964930618707520669 パッケージ情報 1 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 3 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 true Y Products

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