1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

MRF1K50N
  • 新規採用非推奨

  • \n Contact support,\n your local sales representative or an\n \n NXP Authorized Distributor\n \n for product availability.\n

These high ruggedness devices, MRF1K50N and MRF1K50GN, are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

製品画像を見る

製品詳細

セクションを選択:

Features

  • High drain-source avalanche energy absorption capability
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Characterized from 30 to 50 V for ease of use
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Recommended driver: MRFE6VS25N (25 W)
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF and VHF communications
    • Weather radar
  • Mobile Radio
    • VHF and UHF base stations

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
87.5-108(1,2)CW1421 CW23.183.2
230(3,4)Pulse
(100 µsec, 20% Duty Cycle)		1500 Peak23.475.1

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
230(3) Pulse
(100 µsec, 20% Duty Cycle)		 > 65:1 at all Phase Angles 15 Peak
(3 dB Overdrive)		 50 No Device Degradation
1. Data from 87.5-108 MHz wideband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Data from 230 MHz narrowband production test fixture.
4. All data measured in fixture with device soldered to heatsink.

ドキュメンテーション

クイック・リファレンス ドキュメンテーションの種類.

フィルタ

4 ドキュメント

設計・リソース

セクションを選択:

設計・ファイル

フィルタ

1-5 の 11 設計・ファイル

  • シミュレーションとモデル

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

    HTML改訂 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
    ダウンロード
  • シミュレーションとモデル

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

    HTML改訂 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
    ダウンロード
  • シミュレーションとモデル

    MRF1K50N RF High-Power Model ADS Product Model Design Kit

    ZIP改訂 1Jun 17, 2019 00:00:00119.1 KBMRF1K50N_MDL_ADS
    ダウンロード
  • シミュレーションとモデル

    MRF1K50N S-Parameters

    S2P改訂 0Nov 3, 2016 00:00:005.5 KBMRF1K50N_SP
    ダウンロード
  • シミュレーションとモデル

    MRF1K50N RF High-Power Model AWR Product Model Design Kit

    ZIP改訂 0Sep 20, 2016 00:00:00403.6 KBMRF1K50N_MDL_AWR
    ダウンロード
全て表示

サポート

お困りのことは何ですか？?

  • Narrow your search
検索