MRFE6VP6600N|600 W CW, 1.8-600 MHz, 50 V

These high ruggedness devices, MRFE6VP6600N and MRFE6VP6600GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.

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データシート

アプリケーション・ノート

製品詳細

Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single-Ended or in a Push-Pull Configuration
Qualified Up to a Maximum of 50 V_DD Operation
Characterized from 30 to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large-Signal Impedance Parameters
Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
RoHS Compliant

Broadcast
- FM broadcast
- HF and VHF broadcast
Industrial, Scientific, Medical (ISM)
- CO₂ laser generation
- Plasma etching
- Particle accelerators (synchrotrons)
- MRI
- Industrial heating/welding

Aerospace
- VHF omnidirectional range (VOR)
- Weather radar
Mobile Radio
- HF and VHF communications
- PMR base stations

RF Performance Tables

Typical Performance

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
87.5-108^(1,3)	CW	600 CW	24.0	81.8
230⁽²⁾	Pulse (100 µsec, 20% Duty Cycle)	600 Peak	24.7	73.5

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pout (W)	Test Voltage	Result
230⁽²⁾	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	4.0 Peak (3 dB Overdrive)	50	No Device Degradation

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband production test circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.

ドキュメンテーション

クイック・リファレンスドキュメンテーションの種類.

5 ドキュメント

^{データ・シート}
MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet

PDF改訂 0May 26, 20151.2 MBMRFE6VP6600NEnglish
^{アプリケーション・ノート}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDF改訂 0Mar 12, 2009449.7 KBAN3789English
^{パッケージ情報}
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins

PDF改訂 EMar 22, 201676.8 KBSOT1825-1English
^{パッケージ情報}
98ASA10833D

PDF改訂 BMar 22, 201669.8 KBSOT1818-4English
^{ホワイト・ペーパ}
Designing with Plastic RF Power Transistors White Paper

PDF改訂 2Sep 24, 2015894.1 KBRFPLASTICWPEnglish

設計・リソース

設計・ファイル

1-5 の 7 設計・ファイル

^{シミュレーションとモデル}
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML改訂 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT

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^{シミュレーションとモデル}
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTML改訂 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT

ダウンロード
^{シミュレーションとモデル}
MRFE6VP6600N RF High-Power Model ADS Product Model Design Kit

ZIP改訂 1Jun 17, 2019 00:00:0090.9 KBMRFE6VP6600N_MDL_ADS

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^{シミュレーションとモデル}
MRFE6VP6600N, MRFE6VP6600GN S-Parameters

S2P改訂 0May 26, 2015 00:00:0010.7 KBMRFE6VP6600N_SP

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^{シミュレーションとモデル}
MRFE6VP6600N RF High-Power Model AWR Product Model Design Kit

ZIP改訂 0Jul 21, 2015 00:00:00247.1 KBMRFE6VP6600N_MDL_AWR

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^{プリント基板と回路図}
MRFE6VP6600N 87.5-108 MHz PCB DXF file

ZIP改訂 0May 26, 2015 00:00:00410.0 KBMRFE6VP6600N_87P5_108_PCB

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^{プリント基板と回路図}
MRFE6VP6600N 230 MHz PCB DXF file

ZIP改訂 0May 26, 2015 00:00:00327.6 KBMRFE6VP6600N_230_PCB

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全て表示

1.8-600 MHz, 600 W CW, 50 V Wideband RF Power LDMOS Transistors

製品詳細

Features

RF Performance Tables

Typical Performance

Load Mismatch/Ruggedness

ドキュメンテーション

絞り込み

設計・リソース

設計・ファイル

絞り込み

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRFE6VP6600N RF High-Power Model ADS Product Model Design Kit

MRFE6VP6600N, MRFE6VP6600GN S-Parameters

MRFE6VP6600N RF High-Power Model AWR Product Model Design Kit

MRFE6VP6600N 87.5-108 MHz PCB DXF file

MRFE6VP6600N 230 MHz PCB DXF file

絞り込み

サポート

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