MRFE6VP5150N|150 W CW, 1.8-600 MHz, , 50 V

These high ruggedness devices, MRFE6VP5150NR1 and MRFE6VP5150GNR1, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

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製品詳細

Features

Wide Operating Frequency Range
Extreme Ruggedness
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated Stability Enhancements
Low Thermal Resistance
Integrated ESD Protection Circuitry
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

87.5-108 MHz Broadband

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
87.5-108^(1,3)	CW	179	22.5	74.6

230 MHz Narrowband

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
230⁽²⁾	CW	150	26.3	72.0
230⁽²⁾	Pulse (100 µsec, 20% Duty Cycle)	150 Peak	26.1	70.3

Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
98⁽¹⁾	CW	> 65:1 at all Phase Angles	3.0 (3 dB Overdrive)	50	No Device Degradation
230⁽²⁾	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	0.62 Peak (3 dB Overdrive)	50	No Device Degradation

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

ドキュメンテーション

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1-5 の 7 ドキュメント

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MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

PDF改訂 1Jul 25, 2014995.6 KBMRFE6VP5150NEnglish
^{アプリケーション・ノート}
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDF改訂 1May 12, 2004140.7 KBAN1987English
^{エンジニアリング・ブリテン}
Using Data Sheet Impedances for RF LDMOS Devices

PDF改訂 0Jan 19, 2004171.0 KBEB212English
^{パッケージ情報}
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins

PDF改訂 EMar 17, 201675.2 KBSOT1736-2English
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98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins

PDF改訂 FJan 18, 201675.9 KBSOT1736-1English
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Rugged Plastic for Industrial Applications

PDF改訂 0May 23, 2014295.3 KBRF_RUGGED_PLASTIC_INDUSTRIAL_TRNEnglish
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Designing with Plastic RF Power Transistors White Paper

PDF改訂 2Sep 24, 2015894.1 KBRFPLASTICWPEnglish

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設計・リソース

設計・ファイル

5 設計・ファイル

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RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML改訂 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT

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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTML改訂 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT

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MRFE6VP5150N RF High-Power Model AWR Product Model Design Kit

ZIP改訂 0Apr 2, 2015 00:00:00410.9 KBMRFE6VP5150N_MDL_AWR

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MRFE6VP5150N RF High-Power Model ADS Product Model Design Kit

ZIP改訂 1Jun 17, 2019 00:00:00135.5 KBMRFE6VP5150N_MDL_ADS

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MRFE6VP5150N RF Power Electromigration MTTF Calculation Program

XLSX改訂 0Apr 3, 2019 00:00:0091.3 KBMRFE6VP5150N-MTTF-CALC

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1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors

製品詳細

Features

RF Performance Tables

87.5-108 MHz Broadband

230 MHz Narrowband

Ruggedness

ドキュメンテーション

絞り込み

設計・リソース

設計・ファイル

絞り込み

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRFE6VP5150N RF High-Power Model AWR Product Model Design Kit

MRFE6VP5150N RF High-Power Model ADS Product Model Design Kit

MRFE6VP5150N RF Power Electromigration MTTF Calculation Program

絞り込み

サポート

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