1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

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Features

  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single-ended, push-pull or quadrature configuration
  • Qualified up to a maximum of 52 VDD operation
  • High ruggedness, handles > 20:1 VSWR
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large-signal impedance parameters
  • RoHS Compliant
  • These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • Military and commercial L-Band radar systems

部品番号: MMRF1314GS, MMRF1314H, MMRF1314HS.

RF Performance Tables

Typical Performance

In 1200-1400 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1200Pulse
(128 µsec, 10% Duty Cycle)
1130 Peak15.547.5
13001170 Peak17.247.0
14001000 Peak17.046.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1400Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles31.6 Peak
(3 dB Overdrive)
52No Device Degradation

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