100 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

MRF101AN アクティブ

画像にカーソルを合わせると拡大表示されます。

These devices, MRF101AN and MRF101BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.

Features

  • Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
  • Characterized from 30 to 50 V
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI and other medical applications
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • HF and VHF communications
  • Switch mode power supplies

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)		 Reference Circuit
Part Number		 Detailed Data
13.56CW130 CW27.179.6MRF101AN-13MHZTool Summary Page
27CW125 CW24.979.6MRF101AN-27MHZ
40.68CW120 CW23.881.5MRF101AN-40MHZ
50CW119 CW22.882.1MRF101AN-50MHZ
81.36CW130 CW23.280.8MRF101AN-81MHZ
87.5-108CW115 CW20.676.8MRF101AN-88MHZ
136-174CW104 CW21.276.5MRF101AN-VHF
230Pulse
(100 µsec, 20% Duty Cycle)		115 Peak21.176.7MRF101AN-230MHZ

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(dBm)		 Test
Voltage		 Result
40.68CW> 65:1
at all Phase Angles		0.64 CW50No Device Degradation
230Pulse
(100 µsec, 20% Duty Cycle)		> 65:1
at all Phase Angles		1.8 Peak
(3 dB Overdrive)		50No Device Degradation

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N true 0 PSPMRF101ANja 3 エンジニアリング・ブリテン Technical Notes t521 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 1 English MRF101AN, MRF101BN 100 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-220-3 package 1543555071358745152635 PSP 856.2 KB None None documents None 1543555071358745152635 /docs/en/data-sheet/MRF101AN.pdf 856202 /docs/en/data-sheet/MRF101AN.pdf MRF101AN documents N N 2018-11-29 MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF101AN.pdf /docs/en/data-sheet/MRF101AN.pdf Data Sheet N 980000996212993340 2022-12-07 en May 14, 2019 980000996212993340 Data Sheet Y N MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet 1 Japanese MRF101AN, MRF101BN 100 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-220-3 package 1543555071358745152635ja PSP 856.2 KB None None documents None 1543555071358745152635 /docs/ja/data-sheet/MRF101AN.pdf 856202 /docs/ja/data-sheet/MRF101AN.pdf MRF101AN documents N N 2018-11-29 MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/ja/data-sheet/MRF101AN.pdf /docs/ja/data-sheet/MRF101AN.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N ja May 14, 2019 980000996212993340 Data Sheet Y N MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet エンジニアリング・ブリテン Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 1 3 A English TO-220-3, 98ASA01106D 1540565611197725645914 PSP 180.3 KB None None documents None 1540565611197725645914 /docs/en/package-information/SOT1937-1.pdf 180279 /docs/en/package-information/SOT1937-1.pdf sot1937-1 documents N N 2018-10-26 98ASA01106D, TO-220-3 /docs/en/package-information/SOT1937-1.pdf /docs/en/package-information/SOT1937-1.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 13, 2019 302435339416912908 Package Information Y N 98ASA01106D, TO-220-3 false 0 MRF101AN downloads ja true 1 Y PSP エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 データ・シート 1 /docs/ja/data-sheet/MRF101AN.pdf 2018-11-29 1543555071358745152635ja PSP 1 May 14, 2019 Data Sheet MRF101AN, MRF101BN 100 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-220-3 package None /docs/ja/data-sheet/MRF101AN.pdf Japanese documents 856202 None 980000996212993340 2022-12-07 N /docs/ja/data-sheet/MRF101AN.pdf MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/ja/data-sheet/MRF101AN.pdf documents 980000996212993340 Data Sheet N ja None Y pdf 1 N N MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet 856.2 KB MRF101AN N 1543555071358745152635 パッケージ情報 1 /docs/en/package-information/SOT1937-1.pdf 2018-10-26 1540565611197725645914 PSP 3 Feb 13, 2019 Package Information TO-220-3, 98ASA01106D None /docs/en/package-information/SOT1937-1.pdf English documents 180279 None 302435339416912908 2022-12-07 N /docs/en/package-information/SOT1937-1.pdf 98ASA01106D, TO-220-3 /docs/en/package-information/SOT1937-1.pdf documents 302435339416912908 Package Information N en None Y pdf A N N 98ASA01106D, TO-220-3 180.3 KB sot1937-1 N 1540565611197725645914 true Y Products

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