デザイン・ファイル
完全な内訳を受け取ります。 製品の設置面積などについては、 eCad ファイル.
1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs
- このページでは、新規設計を推奨しない製品に関する情報を掲載しています。
These high ruggedness devices, MMRF1308HR5 and MMRF1308HSR5, are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
NI-1230H-4S, NI-1230S-4S Package Image
製品詳細
Features
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single-Ended or in a Push-Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
部品番号： MMRF1308H.
RF Performance Table
230 MHz Narrowband
Typical Performance: VDD = 50 Vdc, IDQ = 100 mA| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
IRL (dB) |
| Pulse (100 µsec, 20% Duty Cycle) |
600 Peak | 230 | 25.0 | 74.6 | –18 |
| CW | 600 Avg. | 230 | 24.6 | 75.2 | –17 |
- Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
- 600 W Pulse Peak Power, 20% Duty Cycle, 100 µsec
購入/パラメータ
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ドキュメント
クイック・リファレンス ドキュメンテーションの種類.
