1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors

MRFE6VS25N
MRFE6VS25NR1 and MRFE6VS25GNR1 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.

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Features

  • Wide Operating Frequency Range
  • Extreme Ruggedness
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Extended ESD Protection Circuit
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

部品番号： MRFE6VS25GN, MRFE6VS25GN-960, MRFE6VS25N.

RF Performance Tables

VHF-UHF Performance

VDD = 50 Volts
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)		 IMD
(dBc)
1.8 to 30Two-Tone
(10 kHz spacing)		25 PEP2551–30
30-512Two-Tone
(200 kHz spacing)		25 PEP17.130.1–32

512 MHz Narrowband, 1030 MHz Narrowband

VDD = 50 Volts
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
512Pulse (100 µsec,
20% Duty Cycle)		25 Peak25.474.5
512CW2525.574.7
1030CW2522.560

Ruggedness, 1030 MHz

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
1030CW>65:1
at all Phase
Angles		0.34
(3 dB
Overdrive)		50No
Device
Degradation

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