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GD313x/GD312x Advanced High Voltage Isolated Gate Driver
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The GD313x/GD312x family consists of a galvanically isolated, single-channel gate driver designed for silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) and insulated-gate bipolar transistor (IGBT) power modules in xEV traction inverter applications. These devices integrate galvanic isolation, a serial peripheral interface (SPI)-programmable, advanced protection features and boost capability for directly driving the gate..
The devices autonomously detect and manage faults and provide configurable VCE/VDS and VGE monitoring for enhanced diagnostics. Built-in self-test (BIST) functions and protection features support the development of systems targeting ASIL C and ASIL D functional safety requirements. The GD313x/2x is AEC-Q100 Grade 1 qualified for automotive applications. The GD313x also provides adjustable dynamic gate strength.
製品詳細
Features
Integrated Gate Driver and Diagnostics
- Adjustable dynamic gate strength on GD313x devices
- Integrated galvanic signal isolation rated up to 8 kV
- Support for 3.3 V and 5.0 V logic input voltages
- Integrated boost capability with up to 20 A of source and sink gate-drive strength
- Optional eXternal active Miller clamp (XAMC) predriver output for enhancing the drive of an external field-effect transistor (FET)
- SPI interface for configuration, diagnostics and status reporting
- Two external analog-to-digital converter (ADC) inputs and internal temperature monitoring
- Programmable ADC sampling delay of up to 7 μs
- VCE/VDS and VGE monitoring for power device diagnostics
- Support for pulse-width modulation (PWM) frequencies up to 100 kHz within applicable thermal limits
- Configurable desaturation (DESAT) protection with a short-circuit response time of less than 1 μs
- Soft shutdown to reduce fault-induced voltage stress
- Common-mode transient immunity (CMTI) greater than 200 V/ns
Safety
- Designed in compliance with ISO 26262 to support systems targeting ASIL D functional safety
- Autonomous fault management with reporting through SPI and interrupt pins
- BIST for analog and digital circuitry
- Continuous monitoring of communications across the isolation barrier
- Dedicated fail-safe state management for low- and high-voltage domains
- Dead-time enforcement with an optional bypass mode for controlled shoot-through
- Overvoltage and undervoltage supervision of VDD, VCC, VEE and VREF supplies
Product Variants
- GD3130: Dynamic gate strength, the VDD, VCC, VEE and VREF supplies
- GD3131: Dynamic gate strength, ADC; no SPI
- GD3132: Dynamic gate strength; no ADC or SPI
- GD3120: Single gate drive, ADC; no SPI
- GD3121: Single gate drive, ADC, no SPI
- GD3122: Single gate drive; no ADC or SPI
