設計・ファイル
3 設計・ファイル
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シミュレーションとモデル
A5G26H110N Peaking Class AB S-Parameters
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シミュレーションとモデル
A5G26H110N Carrier S-Parameters
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シミュレーションとモデル
A5G26H110N-Peaking-Class-C.s2p
2496-2690 MHz, 15 W Avg., 48 V Airfast® RF Power GaN Transistor
A5G26H110N アラートの受信
This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
製品詳細
Features
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for low complexity digital linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
RF Performance Table
2600 MHz
Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 46 mA, VGSB = –4.45 Vdc, Pout = 15 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2496 MHz | 16.2 | 58.5 | 8.6 | -29.2 |
| 2595 MHz | 17.0 | 57.1 | 8.7 | -33.4 |
| 2690 MHz | 16.7 | 58.2 | 8.2 | -34.6 |