設計・ファイル
3 設計・ファイル
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シミュレーションとモデル
A5G23H110N Peaking Class AB S-Parameters
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シミュレーションとモデル
A5G23H110N Carrier Class AB S-Parameters
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シミュレーションとモデル
A5G23H110N Peaking Class C S-Parameters
2300-2400 MHz, 13.8 W Avg., 48 V Airfast® RF Power GaN Transistor
A5G23H110N アラートの受信
This 13.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
製品詳細
Features
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for low complexity linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
RF Performance Table
2300 MHz
Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 50 mA, VGSB = –4.7 Vdc, Pout = 13.8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2300 MHz | 16.3 | 56.6 | 8.5 | -29.1 |
| 2350 MHz | 16.1 | 56.5 | 8.6 | -30.8 |
| 2400 MHz | 16.2 | 56.3 | 8.8 | -32.4 |
ドキュメンテーション
クイック・リファレンス ドキュメンテーションの種類.