設計・ファイル
3 設計・ファイル
-
シミュレーションとモデル
MMRF1050H S-Parameters
-
プリント基板と回路図
MMRF1050H 950 MHz PCB DXF file
-
電卓
MMRF1050H RF Power Electromigration MTTF Calculation Program
1050 W Peak over 850-950 MHz, 50 V Airfast® RF Power LDMOS Transistor
MMRF1050H アラートの受信
This MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.
NI-1230H-4S Package Image
製品詳細
Features
- Internally input and output matched for broadband operation and ease of use
- Device can be used in a single-ended, push-pull or quadrature configuration
- Qualified up to 50 V
- High ruggedness, handles > 20:1 VSWR
- Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
- Characterized with series equivalent large-signal impedance parameters
- RoHS compliant
- Land- or sea-based UHF radar
RF Performance Tables
Typical Performance
VDD = 50 Vdc, IDQ(A+B) = 100 mA| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
|
| 950 | Pulse (100 μsec, 20% Duty Cycle) |
1050 Peak | 21.3 | 63.7 | |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Gps (dB) |
ηD (%) |
| 950 | Pulse (100 μsec, 20% Duty Cycle) |
> 20:1 at all Phase Angles | 15 W Peak (3 dB Overdrive) | 50 | No Device Degradation |
ドキュメンテーション
クイック・リファレンス ドキュメンテーションの種類.