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電卓
MMRF1304NR1, MMRF1304GNR1 RF Power Electromigration MTTF Calculation Program
1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors
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MMRF1304NR1 and MMRF1304GNR1 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications
and radar. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
TO-270-2, TO-270G-2 Package Image
製品詳細
Features
- Wide Operating Frequency Range
- Ruggedness
- Capable of very broadband operation
- Integrated Stability Enhancements
- Low Thermal Resistance
- Extended ESD Protection Circuit
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
RF Performance Tables
VHF-UHF Performance
VDD = 50 Volts| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
IMD (dBc) |
| 1.8 to 30 | Two-Tone (10 kHz spacing) | 25 PEP | 25 | 51 | –30 |
| 30-512 | Two-Tone (200 kHz spacing) | 25 PEP | 17.1 | 30.1 | –32 |
512 MHz Narrowband, 1030 MHz Narrowband
VDD = 50 Volts| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 512 | Pulse (100 µsec, 20% Duty Cycle) | 25 Peak | 25.4 | 74.5 |
| 512 | CW | 25 | 25.5 | 74.7 |
| 1030 | CW | 25 | 22.5 | 60 |
Ruggedness, 1030 MHz
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 1030 | CW | >65:1 at all Phase Angles | 0.34 (3 dB Overdrive) | 50 | No Device Degradation |
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