デザイン・ファイル
3 設計・ファイル
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シミュレーションとモデル
MMRF1050H S-Parameters
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プリント基板と回路図
MMRF1050H 950 MHz PCB DXF file
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電卓
MMRF1050H RF Power Electromigration MTTF Calculation Program
1050 W Peak over 850-950 MHz, 50 V Airfast® RF Power LDMOS Transistor
MMRF1050H アラートの受信
This MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.
NI-1230H-4S Package Image
製品詳細
Features
- Internally input and output matched for broadband operation and ease of use
- Device can be used in a single-ended, push-pull or quadrature configuration
- Qualified up to 50 V
- High ruggedness, handles > 20:1 VSWR
- Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
- Characterized with series equivalent large-signal impedance parameters
- RoHS compliant
- Land- or sea-based UHF radar
部品番号： MMRF1050H.
主要パラメータ
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- Frequency (Min) (MHz)
- 850
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- Frequency (Max) (MHz)
- 950
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- Supply Voltage (Typ) (V)
- 50
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- P1dB (Typ) (dBm)
- 60.2
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- P1dB (Typ) (W)
- 1050
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- Die Technology
- LDMOS
RF Performance Tables
Typical Performance
VDD = 50 Vdc, IDQ(A+B) = 100 mA| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
|
| 950 | Pulse (100 μsec, 20% Duty Cycle) |
1050 Peak | 21.3 | 63.7 | |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Gps (dB) |
ηD (%) |
| 950 | Pulse (100 μsec, 20% Duty Cycle) |
> 20:1 at all Phase Angles | 15 W Peak (3 dB Overdrive) | 50 | No Device Degradation |
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.