設計・ファイル
2 設計・ファイル
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シミュレーションとモデル
A5G35S008N S-Parameters
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プリント基板と回路図
A5G35S008N 3500 MHz PCB DXF file
3300-3800 MHz, 27 dBm Avg., 48 V Airfast® RF Power GaN Transistor
A5G35S008N アラートの受信
This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz.
製品詳細
Features
- High terminal impedances for optimal broadband performance
- Designed for low complexity digital linearization systems
- Universal broadband driver
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
RF Performance Table
3500 MHz
Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 24 mA, Pout = 27 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 3300 MHz | 20.9 | 18.3 | 10.1 | -41.0 |
| 3400 MHz | 20.9 | 18.0 | 9.9 | -41.0 |
| 3500 MHz | 20.9 | 18.0 | 9.8 | -42.3 |
| 3600 MHz | 20.2 | 17.9 | 9.7 | -43.6 |
| 3700 MHz | 19.3 | 17.6 | 9.6 | -44.5 |
| 3800 MHz | 18.4 | 16.7 | 9.6 | -44.8 |