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RDGD31603PHSEVM
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3-Phase Reference Design for VE-Trac™ Drive SiC Module Featuring GD3160.
Kit Contains
- KITGD3160TREVB translator with KL25Z MCU
- Micro USB cable
- Quick Start Guide
3-Phase Reference Design for VE-Trac™ Drive SiC Module Featuring GD3160
RDGD31603PHSEVM is a three phase reference design and evaluation kit populated with six GD3160 gate drive for IGBT/SiC MOSFET devices. The kit includes the Freedom KL25Z microcontroller hardware for interfacing with a PC. The Flex GUI software needs to be installed on the PC, which communicates with the GD3160 via SPI registers, either in daisy chain or standalone configuration. This kit allows the user to configure devices without any software development and conduct SC or double pulse on a single phase.
The RDGD31603PHSEVM is also compatible with NXP MPC5775B/E-EVB (not included), allowing full motor control using our software examples. The evaluation kit is designed to connect to a compatible footprint of VE-Trac SiC OnSemi module (not included) or any other module with the same pinout.
製品詳細
対応製品
プロセッサ＆マイクロコントローラ
超高信頼性MPC57xx MCU
- MPC5777C: Ultra-Reliable MPC5777C MCU for Automotive and Industrial Engine Management
パワーマネージメント
パワートレイン＆エンジン制御
- GD3160: SiC MOSFET用のセグメント化ドライブを備えた高度な高電圧絶縁ゲート・ドライバ
セーフティSBC
- FS6500: Grade 1 and Grade 0 Safety Power System Basis Chip with CAN Flexible Data Transceiver
インターフェース
3.3 V/5 V IO CANトランシーバ
- TJA1042: 高速CANトランシーバ、スタンバイ・モード搭載
Features
Gate Driver
- Integrated Galvanic signal isolation (up to 8 kV)
- High gate current integrated: 15 A source/sink capable
- SPI interface for safety monitoring, configuration, and diagnostic reporting
- Fail-safe state management from LV and HV domain for user-selectable safe state
- Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
- Configurable desaturation and current sense optimized for protecting SiC and IGBTs
- Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
- Integrated ADC for monitoring parameters from HV domain
- CMTI > 100 V/ns
- Available in 5.0 or 3.3 V logic interface variants
- Certified compliant with ISO 26262, supporting ASIL D level functional safety
GD3160
- Advanced single channel gate driver for IGBT and SiC MOSFETs. Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control
購入オプション
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.
設計・リソース
デザイン・ファイル
クイック・リファレンス
設計・ファイルの種類.
2 設計・ファイル
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プリント基板と回路図
RDGD31603PHSEVM Schematics
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Design Tool
RDGD31603PHSEVM Design Files