デザイン・ファイル
2 設計・ファイル
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シミュレーションとモデル
S-parameters BFU730LX
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Design Tool
NXP design kit: RF small signal
NPN Wideband Silicon Germanium RF Transistor
BFU730LX アラートの受信
NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.
sot883c_3d
製品詳細
Features
- Leadless ultra small plastic SMD package 1.0 mm x 0.6 mm x 0.34 mm
- Low noise high gain microwave transistor
- Noise figure (NF) = 0.75 dB at 6 GHz
- High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz
- Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:
- input third-order intercept point (IP3i) = 15 dBm
- input power at 1 dB gain compression (Pi(1dB)) = 0 dBm
- 110 GHz fT silicon germanium technology
Target Applications
- Wi-Fi / WLAN
- WiMAX
- LNA for GPS, GLONASS, Galileo and Compass (BeiDou)
- DBS (2nd LNA stage, mixer stage, DRO), SDARS
- RKE, AMR / Zigbee
- LNA for microwave communications systems
- Low current battery equipped applications
- Microwave driver / buffer applications
部品番号： BFU730LX.
