900-1215 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors
MMRF1312H アラートの受信
These RF power devices, MMRF1312H, MMRF1312HS and MMRF1312GS, are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and commercial L-Band radar applications such as IFF and DME/TACAN.
NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image
製品詳細
Features
- Internally input and output matched for broadband operation and ease of use
- Device can be used in a single-ended, push-pull, or quadrature configuration
- Qualified up to a maximum of 52 VDD operation
- High ruggedness, handles > 20:1 VSWR
- Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
- Characterized with series equivalent large-signal impedance parameters
- RoHS Compliant
- Air traffic control systems (ATC), including ground-based secondary radars such as IFF interrogators or transponders
- Distance measuring equipment (DME)
- Tactical air navigation (TACAN)
部品番号： MMRF1312GS, MMRF1312H, MMRF1312HS.
主要パラメータ
-
- Frequency (Min) (MHz)
- 900
-
- Frequency (Max) (MHz)
- 1215
-
- Supply Voltage (Typ) (V)
- 52
-
- P1dB (Typ) (dBm)
- 60
-
- P1dB (Typ) (W)
- 1000
-
- Die Technology
- LDMOS
RF Performance Tables
Typical Short Pulse Performance
In 900-1215 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 900 | Pulse (128 µsec, 10% Duty Cycle) | 1615 Peak | 15.2 | 54.0 |
| 960 | 1560 Peak | 17.3 | 55.7 | |
| 1030 | 1500 Peak | 17.8 | 53.8 | |
| 1090 | 1530 Peak | 18.0 | 54.5 | |
| 1215 | 1200 Peak | 19.2 | 58.5 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 1030(1) | Pulse (128 µsec, 10% Duty Cycle) | > 20:1 at all Phase Angles | 20.2 Peak (3 dB Overdrive) | 52 | No Device Degradation |