900-1215 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

製品画像を見る

製品詳細

Features

  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single-ended, push-pull, or quadrature configuration
  • Qualified up to a maximum of 52 VDD operation
  • High ruggedness, handles > 20:1 VSWR
  • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large-signal impedance parameters
  • RoHS Compliant
  • Air traffic control systems (ATC), including ground-based secondary radars such as IFF interrogators or transponders
  • Distance measuring equipment (DME)
  • Tactical air navigation (TACAN)

部品番号: MMRF1312GS, MMRF1312H, MMRF1312HS.

主要パラメータ

  • Frequency (Min) (MHz)
    900
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    52
  • P1dB (Typ) (dBm)
    60
  • P1dB (Typ) (W)
    1000
  • Die Technology
    LDMOS

RF Performance Tables

Typical Short Pulse Performance

In 900-1215 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
900Pulse
(128 µsec, 10% Duty Cycle)
1615 Peak15.254.0
9601560 Peak17.355.7
10301500 Peak17.853.8
10901530 Peak18.054.5
12151200 Peak19.258.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030(1)Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles20.2 Peak
(3 dB Overdrive)
52No Device Degradation
1. Measured in 1030 MHz narrowband reference circuit.

ドキュメンテーション

クイック・リファレンス ドキュメンテーションの種類.

1-5 の 6 ドキュメント

全て表示

サポート

お困りのことは何ですか??