700 W Pulse over 960-1215 MHz, 52 V Airfast® RF Power LDMOS Transistor

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製品詳細

Features

  • Internally input and output matched for broadband operation and ease of use
  • The device can be used single-ended, push-pull, or quadrature configuration
  • Qualified up to a maximum of 55 VDD operation
  • High ruggedness, handles > 20:1 VSWR
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
  • Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)
  • RoHS Compliant

部品番号: AFV10700GS, AFV10700H, AFV10700H-1090, AFV10700S.

主要パラメータ

  • Frequency (Min) (MHz)
    960
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50, 52
  • P1dB (Typ) (dBm)
    58.5
  • P1dB (Typ) (W)
    700
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

In 1030-1090 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency
(MHz) (1)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
1030Pulse
(128 µsec, 10% Duty Cycle)
50800 Peak17.552.1
1090700 Peak19.056.1
103052850 Peak17.551.7
1090770 Peak19.256.1

Typical Performance

In 960-1215 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency
(MHz) (1)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
960 Pulse
(128 µsec, 4% Duty Cycle)
50 747 Peak 16.7 50.8
1030713 Peak16.549.7
1090700 Peak16.547.1
1215704 Peak16.554.5

Typical Performance

In 1030 MHz narrowband production test fixture, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
1030 (2)Pulse
(128 µsec, 10% Duty Cycle)
50730 Peak19.258.5

Narrowband Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030 (2)Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles17.2 Peak
(3 dB Overdrive)
50No Device Degradation
1. Measured in 1030-1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband production test fixture.

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