2300-2400 MHz, 63 W Avg., 30 V Airfast® RF Power LDMOS Transistor
A3T23H300W23S アラートの受信
- アクティブ
\n Contact support,\n your local sales representative or an\n
The A3T23H300W23S 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.
ACP-1230S-4L2S Package Image
製品詳細
Features
- Advanced high performance in-package Doherty
- Designed for wide instantaneous bandwidth applications
- Greater negative gate-source voltage range for improved Class C operation
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for digital predistortion error correction systems
- RoHS compliant
部品番号： A3T23H300W23S.
RF Performance Table
2300 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 30 Vdc, IDQA = 500 mA, VGSB = 0.7 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2300 MHz | 15.6 | 49.3 | 8.4 | –30.1 |
| 2350 MHz | 16.1 | 48.7 | 8.5 | –31.9 |
| 2400 MHz | 16.1 | 48.0 | 8.2 | –32.7 |
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.
4 ドキュメント
-
エンジニアリング・ブリテン
Using Data Sheet Impedances for RF LDMOS Devices
-
パッケージ情報
98ASA00974D, ACP-1230S-4L2S