設計・ファイル
3 設計・ファイル
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シミュレーションとモデル
A3I20X050N S-Parameters
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プリント基板と回路図
A3I20X050N 1800-2200 MHz PCB DXF file
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プリント基板と回路図
A3I20X050N 1800 MHz PCB DXF file
1800-2200 MHz, 6.3 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier
A3I20X050N アラートの受信
The A3I20X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.
OM-400-8, OM-400G-8 Package Image
製品詳細
Features
- Integrated Doherty splitter and combiner
- On-chip matching (50 ohm input, DC blocked)
- Integrated quiescent current temperature compensation with enable/disable function
- RoHS compliant
RF Performance Table
1800 MHz
Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ(Carrier) = 160 mA, VGS(Peaking) = 2.15 Vdc, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
PAE (%) |
ACPR (dBc) |
| 1805 MHz | 28.7 | 38.1 | –37.1 |
| 1840 MHz | 28.7 | 39.1 | –39.7 |
| 1880 MHz | 28.7 | 39.0 | –37.5 |
1800–2200 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ(Carrier) = 145 mA, VGS(Peaking) = 2.20 Vdc, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
PAE (%) |
ACPR (dBc) |
| 1800 MHz | 28.3 | 37.3 | –33.5 |
| 1900 MHz | 28.4 | 38.0 | –37.7 |
| 2000 MHz | 28.7 | 37.6 | –40.9 |
| 2100 MHz | 29 | 38.0 | –39.1 |
| 2200 MHz | 29.0 | 37.6 | –34.1 |