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RDGD3160I3PH5EVB
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3 Phase Reference Design for HP Drive Featuring GD3160.
Three phase reference design evaluation kit featuring GD3160 gate drive devices for IGBT or SiC MOSFET
Kit Contains
- Quick Start Guide
3 Phase Reference Design for HP Drive Featuring GD3160
The RDGD3160I3PH5EVB is a three-phase inverter reference design and evaluation board populated with six GD3160 gate drivers for IGBT/SiC MOSFET devices. This board supports SPI daisy chain communication for programming and communication with three high-side gate drivers and three low-side gate drivers independently and comes with fault management and supporting circuitry.
The evaluation kit is designed to connect to a compatible HybridPACK™ Drive SIC/IGBT module or onsemi VE-trac™ IGBT module for full three phase inverter applications development.
製品詳細
対応製品
パワーマネージメント
パワートレイン＆エンジン制御
- GD3160: SiC MOSFET用のセグメント化ドライブを備えた高度な高電圧絶縁ゲート・ドライバ
セーフティSBC
- FS6500: Grade 1 and Grade 0 Safety Power System Basis Chip with CAN Flexible Data Transceiver
プロセッサ＆マイクロコントローラ
超高信頼性MPC57xx MCU
- MPC5777C: Ultra-Reliable MPC5777C MCU for Automotive and Industrial Engine Management
インターフェース
3.3 V/5 V IO CANトランシーバ
- TJA1042: 高速CANトランシーバ、スタンバイ・モード搭載
Features
Gate Driver
- Integrated Galvanic signal isolation (up to 8 kV)
- High gate current integrated: 15 A source/sink capable
- SPI interface for safety monitoring, configuration and diagnostic reporting
- Fail-safe state management from LV and HV domain for user-selectable safe state
- Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
- Configurable desaturation and current sense optimized for protecting SiC and IGBTs
- Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
- Integrated ADC for monitoring parameters from HV domain
- CMTI > 100 V/ns
- Available in 5.0 or 3.3 V logic interface variants
- Certified compliant with ISO 26262, supporting ASIL D level functional safety
GD3160
- Advanced single channel gate driver for IGBT and SiC MOSFETs. Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control
購入オプション
設計・リソース
デザイン・ファイル
クイック・リファレンス
設計・ファイルの種類.
2 設計・ファイル
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プリント基板と回路図
RDGD3160I3PH5EVB Design files
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プリント基板と回路図
RDGD3160I3PH5EVB Schematics