-
OM7886
-
BGU8H1 LTE LNA evaluation board.
- BGU8H1 LNA evaluation board in ESD safe packing
デザイン・ファイル
1 設計・ファイル
-
プリント基板と回路図
Board layout files
BGU8H1 LTE LNA Evaluation Board
OM7886 アラートの受信
The BGU8H1 LTE LNA evaluation board simplifies the evaluation of the BGU8H1 LNA for the LTE application. The evaluation board enables testing of the device performance and requires no additional support circuitry. The board is fully assembled with the BGU8H1, the input series inductor and a decoupling capacitor. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGU8H1 can operate from a 1.5 V to 3.1 V single supply and consumes about 5 mA.
製品詳細
対応製品
RF
LTE用LNA
- BGU8H1: SiGe:C Low Noise Amplifier MMIC for LTE
Features
Key Features
- The BGU8H1 is optimized for 2300 MHz to 2690 MHz
- Noise figure (NF) = 1.0 dB
- Gain = 13 dB
- High input 1 dB compression point of -1 dBm
- High out of band IP3i of 8 dBm
- Requires only one input matching inductor and one supply decoupling capacitor
- Input and output DC decoupled
- Integrated matching for the output
- ESD protection on all pins (HBM > 2 kV)
- 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
- 180 GHz transit frequency - SiGe:C technology
Power Management
- Supply voltage 1.5 V to 3.1 V
- Optimized performance at low supply current of 5 mA
- Power-down mode current consumption < 1 µA
購入オプション