設計・ファイル
3 設計・ファイル
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プリント基板と回路図
A2T08VD020N 700 MHz PCB DXF file
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プリント基板と回路図
A2T08VD020N 900 MHz PCB DXF file
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電卓
A2T08VD020N RF Power Electromigration MTTF Calculation Program
728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor
A2T08VD020N アラートの受信
The A2T08VD020NT1 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.
RF ISO PQFN8x8 1894 Plastic
製品詳細
Features
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- On-Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
- Integrated ESD Protection
- RoHS Compliant
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 920 MHz | 19.3 | 21.3 | –43.4 |
| 940 MHz | 19.3 | 21.5 | –43.8 |
| 960 MHz | 19.1 | 21.1 | –43.9 |
700 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 728 MHz | 19.2 | 18.9 | –42.3 |
| 748 MHz | 19.2 | 19.2 | –42.6 |
| 768 MHz | 18.9 | 18.7 | –42.6 |
ドキュメンテーション
クイック・リファレンス ドキュメンテーションの種類.