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MRF7S35120HSR3 RF Power Electromigration MTTF Calculation Program
3100-3500 MHz, 120 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET
MRF7S35120HSR3 アラートの受信
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The MRF7S35120HSR3 is designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
RF ISO 465A image
製品詳細
Features
- Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%
- Power Gain: 12 dB
- Drain Efficiency: 40%
- Rise Time: 6 ns
- Fall Time: 6 ns
- Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
- Power Gain: 13 dB
- Drain Efficiency: 16%
- RCE: –33 dB (EVM — 2.2% rms)
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak Power
- Capable of Handling 3 dB Overdrive @ 32 Vdc
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
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