The ZBT® RAM is an 8M–bit synchronous fast static RAM designed to provide
Zero Bus Turnaround®. The ZBT® RAM allows 100% use of bus cycles during
back–to–back read/write and write/read cycles. The MCM64Z836 (organized as
256K words by 36 bits) and the MCM64Z918 (organized as 512K words by 18
bits) are fabricated in NXP’s high performance silicon gate CMOS tech-nology.
This device integrates input registers, an output register, a 2–bit address
counter, and high speed SRAM onto a single monolithic circuit for reduced parts
count in communication applications. Synchronous design allows precise cycle
control with the use of an external positive–edge–triggered clock (CK). CMOS
circuitry reduces the overall power consumption of the integrated functions for
greater reliability.