コンパクトリスト
865-960 MHz, 80 W CW, 28 V GSM/EDGE RF LDMOS Wideband Integrated Amplifiers
- このページには、製造中止（生産終了）となった製品の情報が記載されています。本ページに記載されている仕様および情報は、過去の参考情報です。
The MWE6IC9080NR1, MWE6IC9080GNR1 and MWE6IC9080NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 865 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.
製品詳細
RF Performance Tables
900 MHz
Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW| Frequency | Gps (dB) |
PAE (%) |
| 920 MHz | 29.0 | 49.7 |
| 940 MHz | 28.8 | 51.6 |
| 960 MHz | 28.5 | 52.3 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 80 Watts CW Pout
- Typical Pout @ 1 dB Compression Point ≃ 90 Watts CW
900 MHz
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 35 Watts Avg.| Frequency | Gps (dB) |
PAE (%) |
SR1 @ 400 kHz (dBc) |
SR2 @ 600 kHz (dBc) |
EVM (% rms) |
| 920 MHz | 30.0 | 37.0 | –62 | –75 | 0.8 |
| 940 MHz | 30.0 | 37.8 | –62 | –75 | 1.2 |
| 960 MHz | 29.5 | 38.0 | –62 | –75 | 1.5 |