746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers

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Features

    Final Application
  • Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921–960 MHz)
    Power Gain: 30 dB
    Power Added Efficiency: 45%
  • Driver Application
  • Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band (865–894 MHz), IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 31 dB
    Power Added Efficiency: 21%
    ACPR @ 750 kHz Offset:  –52 dBc in 30 kHz Bandwidth
  • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • On-Chip Current Mirror gm Reference FET for Self Biasing Application
  • Integrated ESD Protection
  • 200°C Capable Plastic Package
  • N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

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