3200-4000 MHz, 1.8 W Avg., 28 V Airfast®Wideband Integrated RF LDMOS Amplifier
A3I35D012WN アラートの受信
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The A3I35D012WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on-chip matching that makes it usable from 3200 to 4000 MHz. Its multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station
modulation formats.
製品詳細
RF Performance Table
3500 MHz
Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 36 mA, IDQ2(A+B) = 138 mA, Pout = 1.8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
PAE (%) |
ACPR (dBc) |
| 3400 MHz | 28.3 | 16.5 | –45.2 |
| 3500 MHz | 28.0 | 17.3 | –45.1 |
| 3600 MHz | 27.9 | 17.8 | –44.8 |
| 3700 MHz | 27.8 | 17.8 | –44.5 |
| 3800 MHz | 27.8 | 17.5 | –44.7 |