30-2200 MHz, 125 W CW, 50 V RF Power GaN Transistor
MMRF5017HS アラートの受信
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The MMRF5017HS 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications.
This part is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-400S-2S Package Image
製品詳細
Features
- Advanced GaN on SiC, offering high power density
- Decade bandwidth performance
- Input matched for extended wideband performance
- High ruggedness: > 10:1 VSWR
- RoHS compliant
- Ideal for military end-use applications, including the following:
- Narrowband and multi-octave wideband amplifiers
- Radar
- Jammers
- EMC testing
- Also suitable for commercial applications, including the following:
- Public mobile radios, including emergency service radios
- Industrial, scientific and medical
- Wideband laboratory amplifiers
- Wireless cellular infrastructure
部品番号： MMRF5017HS.
RF Performance Tables
Typical Performance
VDD = 50 Vdc, TA = 25°C| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 30-940 (1,2) | CW | 90 | 16.0 | 45.0 |
| 520 (1) | CW | 125 | 18.0 | 59.1 |
| 940 (1) | CW | 80 | 18.4 | 44.0 |
| 2200 | Pulse (100 µsec, 20% Duty Cycle) | 200 | 17.0 | 57.0 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 520 (1) | Pulse (100 µsec, 20% Duty Cycle) |
> 10:1 at All Phase Angles | 3.4 (3 dB Overdrive) |
50 | No Device Degradation |
2. The values shown are the minimum measured efficiency performance numbers across the indicated frequency range.
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