2110-2170 MHz, 3.0 W, 26 V, 31 dB 3G Band RF Linear LDMOS Amplifier
MHL21336 アラートの受信
| Replaced by MHL21336N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. |
The MHL21336 is designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.