A6G25H112WNT2

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With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status.
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Please see also our Restricted Substances Declaration.

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NXP Semiconductors
Product content declaration of A6G25H112WNT2Last Revision (GMT):
Monday, 26 January 2026, 07:22:00 PM
Part TypePackage VersionPackage NameTotal part
weight
EnvironmentTermination2nd Level InterconnectFor more information:
Halogen Free (Cl+Br)Lead Free (Pb)EU RoHS CompliantPlatingBase Alloy
A6G25H112WNT2SOT2053HLSON10413.799527 mg YesYesYesTin (Sn)Cu alloye3contact us
Manufacturer Part Number (MPN)Effective DateVersionPb-free solderingSnPb solderingNumber of processing cyclesManufacturing
Moisture Sensitivity Level
/ Floor Life
Peak Package temperatureMax time at peak temperatureMoisture Sensitivity Level
/ Floor Life
Peak Package temperatureMax time at peak temperature
9354 641 315182025-12-11E3 / 168 hours26040 sec.Not ApplicableNot ApplicableNot Applicable3Kuala Lumpur, Malaysia;External manufacturing
SubpartHomogeneous MaterialSubstanceCAS numberMass(mg)Mass(%) of
Material
Mass(%) of
Total part
CategoryDescription
Bonding Wire - AuBonding Wire - AuGold and its compoundsGold, metal7440-57-51.87533999.9900000.453200
Miscellaneous substancesOther miscellaneous substances (less than 10%).0.0001880.0100000.000045
Subtotal1.875527100.00000000.453245
Copper Lead-Frame, Pre-Plated AgCopper AlloyCopper and its compoundsCopper, metal7440-50-8226.30609597.29100054.689791
Iron and its compoundsIron, metal7439-89-65.5127962.3700001.332238
Lead and its compoundsLead, metallic lead and lead alloys7439-92-10.0395430.0170000.009556
Phosphorus compoundsPhosphorus, elemental (not containing red allotrope)7723-14-00.3861280.1660000.093313
Tin and its compoundsTin, metal7440-31-50.0697820.0300000.016864
Zinc and its compoundsZinc, metal7440-66-60.2930850.1260000.070828
Subtotal232.607430100.000000056.212590
Silver PlatingMiscellaneous substancesOther miscellaneous substances (less than 10%).0.0002350.0100000.000057
Silver and its compoundsSilver, metal7440-22-42.34933599.9900000.567747
Subtotal2.349570100.00000000.567804
Die EncapsulantDie EncapsulantEpoxy ResinsOther Epoxy resins4.2739752.5000001.032861
Inorganic Silicon compoundsSilica, vitreous60676-86-0161.89817394.70000039.124784
Inorganic compoundsCarbon Black1333-86-40.5128770.3000000.123943
Phenols and Phenolic ResinsPhenol, polymer with formaldehyde9003-35-44.2739752.5000001.032861
Subtotal170.959000100.000000041.314450
Epoxy AdhesiveEpoxy AdhesiveEpoxy ResinsProprietary Material-Other Epoxy resins0.0205713.0612000.004971
Phenols and Phenolic ResinsProprietary Material-Other phenolic resins0.0205713.0612000.004971
Silver and its compoundsSilver, metal7440-22-40.63085793.8776000.152455
Subtotal0.672000100.00000000.162398
Post-plating - Lead FreePost-plating - Lead FreeLead and its compoundsLead, metallic lead and lead alloys7439-92-10.0007980.0200000.000193
Tin and its compoundsTin, metal7440-31-53.99120299.9800000.964525
Subtotal3.992000100.00000000.964718
Semiconductor Die 1Semiconductor DieInorganic Silicon compoundsSilicon7440-21-30.29497098.0000000.071283
Miscellaneous substancesOther miscellaneous substances (less than 10%).0.0060202.0000000.001455
Subtotal0.300990100.00000000.072738
Semiconductor Die 2Die SubstrateInorganic Silicon compoundsSilicon carbide409-21-20.19222395.2000000.046453
Inorganic compoundsGallium nitride25617-97-40.0074713.7000000.001805
Miscellaneous substancesOther miscellaneous substances (less than 10%).0.0022211.1000000.000537
Subtotal0.201915100.00000000.048795
Metallization LayerGold and its compoundsGold, metal7440-57-50.11655598.2884000.028167
Miscellaneous substancesOther miscellaneous substances (less than 10%).0.0001190.1001000.000029
Nickel and its compoundsNickel, metal7440-02-00.0007120.6005000.000172
Titanium and its compoundsTitanium, metal7440-32-60.0006050.5105000.000146
Tungsten and its compoundsTungsten, metal7440-33-70.0005930.5005000.000143
Subtotal0.118585100.00000000.028658
Semiconductor Die 3Die SubstrateInorganic Silicon compoundsSilicon carbide409-21-20.17453095.2000000.042177
Inorganic compoundsGallium nitride25617-97-40.0067833.7000000.001639
Miscellaneous substancesOther miscellaneous substances (less than 10%).0.0020171.1000000.000487
Subtotal0.183330100.00000000.044304
Metallization LayerGold and its compoundsGold, metal7440-57-50.10582798.2884000.025575
Miscellaneous substancesOther miscellaneous substances (less than 10%).0.0001080.1001000.000026
Nickel and its compoundsNickel, metal7440-02-00.0006470.6005000.000156
Titanium and its compoundsTitanium, metal7440-32-60.0005500.5105000.000133
Tungsten and its compoundsTungsten, metal7440-33-70.0005390.5005000.000130
Subtotal0.107670100.00000000.026020
Semiconductor Die 4Semiconductor DieGold and its compoundsGold, metal7440-57-50.0017501.0200000.000423
Inorganic Silicon compoundsSilicon7440-21-30.16641497.0004000.040216
Miscellaneous substancesOther miscellaneous substances (less than 10%).0.0033961.9796000.000821
Subtotal0.171560100.00000000.041460
Semiconductor Die 5Semiconductor DieGold and its compoundsGold, metal7440-57-50.0026521.0200000.000641
Inorganic Silicon compoundsSilicon7440-21-30.25215397.0004000.060936
Miscellaneous substancesOther miscellaneous substances (less than 10%).0.0051461.9796000.001244
Subtotal0.259950100.00000000.062820
Total413.799527100.0000000100.0000000
Note(s):
1Some materials contains substances with a generic description as the actual composition of the substances are either considered proprietary or no official CAS number is available. If a CAS number is given, it is the closest match available
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, NXP does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
NXP Semiconductors
产品内容声明 A6G25H112WNT2
Product content declaration of A6G25H112WNT2
上次修订 Last Revision (GMT):
Monday, 26 January 2026, 07:22:00 PM
部件名称
Name of the part
均质材料
Homogeneous Material
有毒或有害物质和元素 (Toxic or hazardous Substances and Elements)
铅(Pb)镉(Cd)汞(Hg)六价铬(Cr-VI)多溴联苯(PBB)多溴二苯醚(PBDE)邻苯二甲酸二正丁酯(DBP)邻苯二甲酸二异丁酯(DIBP)邻苯二甲酸丁基苄酯(BBP)邻苯二甲酸二(2-乙基)己酯(DEHP)
焊丝-金
Bonding Wire - Au
焊丝-金
Bonding Wire - Au
OOOOOOOOOO
铜引线框架,预镀银
Copper Lead-Frame, Pre-Plated Ag
铜合金
Copper Alloy
OOOOOOOOOO

镀银
Silver Plating
OOOOOOOOOO
芯片密封胶
Die Encapsulant
芯片密封胶
Die Encapsulant
OOOOOOOOOO
环氧树脂粘合剂
Epoxy Adhesive
环氧树脂粘合剂
Epoxy Adhesive
OOOOOOOOOO
封装后电镀- 无铅
Post-plating - Lead Free
封装后电镀- 无铅
Post-plating - Lead Free
OOOOOOOOOO
半导体芯片
Semiconductor Die 1
半导体芯片
Semiconductor Die
OOOOOOOOOO
半导体芯片
Semiconductor Die 2
模具基板
Die Substrate
OOOOOOOOOO

金属化层
Metallization Layer
OOOOOOOOOO
半导体芯片
Semiconductor Die 3
模具基板
Die Substrate
OOOOOOOOOO

金属化层
Metallization Layer
OOOOOOOOOO
半导体芯片
Semiconductor Die 4
半导体芯片
Semiconductor Die
OOOOOOOOOO
半导体芯片
Semiconductor Die 5
半导体芯片
Semiconductor Die
OOOOOOOOOO
O: 表示该有毒有害物质在该部件所有均质材料中的含量均在SJ/T11363-2006标准规定的限量要求以下。
O: Indicates all homogeneous materials hazardous substances content are below the SJ/T11363-2006 MCV limit.
X: 该有毒有害物质至少在该部件的某一均质材料中的含量超出SJ/T11363-2006标准规定的限量要求。
X: Indicates that the hazardous substance content contained in any one of the homogeneous materials of the part exceeded the MCV limits specified in the Standard SJ/T 11363-2006.
备注: 该半导体产品具有无限期的环保使用期限(EFUP)。
Remark: This semiconductor product has an indefinite environmental friendly use period (EFUP).
免责声明
Disclaimer
本文件中的所有信息只为考察或指示目的。本文件中的所有信息被认为是精确和可靠的。然而,恩智浦不对该等信息的精确性和完整性给予任何陈述和保证,且恩智浦不对使用该等信息造成的后果承担责任。恩智浦可以在任何时候对文件中公布的信息加以修改,无需经过通知。不同生产地的产品可能存在微小偏差。本文件取代先于此次公布的所有信息。本文件中任何信息都不能被解释为对承诺开放的销售产品的要约,或者授予、让与或暗示任何版权、专利或者其它工业或知识产权的任何许可。

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, NXP does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
NXP Semiconductors
Compliance Documentation of A6G25H112WNT2Last Revision (GMT):
Monday, 26 January 2026, 07:22:00 PM
SubpartHomogeneous MaterialCertificate of Analysis(CoA)
RoHSPhthalates *Halogens *Antimony *
Bonding Wire - AuTest Report
12 May 2025
Test Report
12 May 2025
Test Report
12 May 2025
Test Report
12 May 2025
Copper Lead-Frame, Pre-Plated AgAG PLATINGTest Report
6 Nov 2025
Test Report
6 Nov 2025
Test Report
6 Nov 2025
Test Report
6 Nov 2025
C194Test Report
24 Jan 2025
Test Report
24 Jan 2025
Test Report
24 Jan 2025
Test Report
24 Jan 2025
Die EncapsulantTest Report
3 Feb 2025
Test Report
3 Feb 2025
Test Report
3 Feb 2025
Test Report
3 Feb 2025
Epoxy AdhesiveTest Report
25 Jul 2025
Test Report
25 Jul 2025
Test Report
25 Jul 2025
Test Report
25 Jul 2025
Post-plating - Lead FreeTest Report
21 May 2025
Test Report
21 May 2025
Test Report
21 May 2025
Test Report
21 May 2025
Semiconductor Die 1AU BUMPINGNot AvailableNot AvailableNot AvailableNot Available
DIENot AvailableNot AvailableNot AvailableNot Available
Semiconductor Die 2Not AvailableNot AvailableNot AvailableNot Available
Semiconductor Die 3Test Report
5 Jun 2025
Test Report
5 Jun 2025
Test Report
5 Jun 2025
Test Report
5 Jun 2025
Semiconductor Die 4AU BUMPINGNot AvailableNot AvailableNot AvailableNot Available
DIENot AvailableNot AvailableNot AvailableNot Available
Semiconductor Die 5AU BUMPINGNot AvailableNot AvailableNot AvailableNot Available
DIENot AvailableNot AvailableNot AvailableNot Available
For more information: contact us
Note(s):
* NXP does not commit to providing this report for all product materials!
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, NXP does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.